BSB008NE2LXXUMA1
MOSFET N-CH 25V 46A/180A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB008NE2LXXUMA1, offers a 25V drain-source voltage and a robust 180A continuous drain current (Tc) at 25°C. This surface mount device, housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™), features a low on-resistance of 0.8mOhm at 30A and 10V Vgs. Key parameters include a gate charge of 343 nC at 10V and input capacitance of 16000 pF at 12V. With 2.8W (Ta) and 89W (Tc) power dissipation, it operates across a wide temperature range of -40°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 343 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 12 V |
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