BS7067N06LS3G
MOSFET N-CH 60V 14A/20A 8TSDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BS7067N06LS3G is an N-channel power MOSFET designed for demanding applications. Featuring a 60V drain-source voltage and a continuous drain current capability of 14A (ambient) or 20A (case), this component excels in power conversion and management tasks. The low on-resistance of 6.7mOhm at 20A and 10V gate-source voltage, combined with a maximum gate charge of 62 nC at 10V, ensures efficient switching performance. With a maximum power dissipation of 2.1W (ambient) and 78W (case), it is suitable for high-power density designs. The device utilizes Infineon's advanced OptiMOS™ technology and is housed in an 8-lead PG-TSDSON-8 package for surface mounting. This MOSFET is commonly employed in automotive, industrial power supplies, and consumer electronics where robust power handling and thermal management are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TSDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 30 V |
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