AUXFN8403TR
MOSFET N-CH 40V 95A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number AUXFN8403TR, offers a 40V drain-source voltage and a continuous drain current of 95A at 25°C (Tc). This surface mount component is packaged in an 8-PQFN (5x6) with exposed pad. Key electrical characteristics include a maximum on-resistance (Rds On) of 3.3mOhm at 50A and 10V, an input capacitance (Ciss) of 3174pF at 25V, and a gate charge (Qg) of 98nC at 10V. The device supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 3.9V at 100µA. With a maximum power dissipation of 94W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in power management, automotive, and industrial sectors. It is supplied on tape and reel for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3174 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
