AUXAKF1405ZS-7P
MOSFET N-CH 55V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUXAKF1405ZS-7P. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C. The device exhibits a low on-resistance of 4.9mOhm maximum at 88A and 10V gate drive. With a maximum power dissipation of 230W at the case temperature, it is designed for high-power switching applications. The input capacitance (Ciss) is specified at 5360pF maximum at 25V, and the gate charge (Qg) is 230nC maximum at 10V. This surface mount device is housed in a TO-263-7, D2PAK package. It operates across a temperature range of -55°C to 175°C. Applications include industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V |