AUIRLU3110Z
MOSFET N-CH 100V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRLU3110Z is a high-performance N-Channel power MOSFET designed for demanding applications. This component offers a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 42A (Tc) at 25°C, with a maximum power dissipation of 140W (Tc). Featuring a low on-resistance of 14mOhm @ 38A, 10V, and a gate charge (Qg) of 48 nC @ 4.5V, this device ensures efficient power switching. The AUIRLU3110Z is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Its robust design makes it suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
