AUIRLS8409-7TRL
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRLS8409-7TRL, in a TO-263-7 (D2PAK) surface mount package. This device features a 40V drain-source voltage and a continuous drain current of 240A at 25°C (Tc). The low on-resistance is specified as 0.75mOhm maximum at 100A and 10V gate-source voltage. Gate charge is 266 nC maximum at 4.5V Vgs, with input capacitance Ciss at 16488 pF maximum at 25V Vds. Maximum power dissipation is 375W (Tc). This component is engineered for demanding automotive and industrial applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 266 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16488 pF @ 25 V |
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