AUIRLS8409-7P
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRLS8409-7P is an N-Channel Power MOSFET designed for automotive applications. This component features a 40V drain-source voltage and a continuous drain current capability of 240A at 25°C (Tc). The device boasts a low on-resistance (Rds(on)) of 0.75mOhm at 100A and 10V, contributing to efficient power handling with a maximum power dissipation of 375W (Tc). It is packaged in a TO-263-7 (D2PAK) surface mount configuration. Key parameters include a gate charge of 266 nC (Max) at 4.5V and an input capacitance (Ciss) of 16488 pF (Max) at 25V. The operating temperature range is -55°C to 175°C (TJ), and it meets AEC-Q101 qualification standards. This MOSFET is suitable for demanding automotive power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PG-TO263-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 266 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16488 pF @ 25 V |
| Qualification | AEC-Q101 |
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