AUIRLS4030
MOSFET N-CH 100V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRLS4030 is an N-Channel power MOSFET from the HEXFET® series, designed for high-current switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 180A at 25°C (Tc), with a maximum power dissipation of 370W (Tc). Optimized for performance, it offers a low on-resistance (Rds On) of 4.3mOhm at 110A and 10V, achieved with a gate-source voltage (Vgs) range of 4.5V to 10V. The device exhibits a gate charge (Qg) of 130 nC at 4.5V and an input capacitance (Ciss) of 11360 pF at 50V. Packaged in a TO-263-3 (D2PAK) surface mount configuration, the AUIRLS4030 is AEC-Q101 qualified, making it suitable for demanding automotive applications. It operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±16V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 110A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11360 pF @ 50 V |
| Qualification | AEC-Q101 |
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