AUIRLS3114Z
MOSFET N-CH 40V 56A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRLS3114Z is a N-Channel HEXFET® Power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 56A at 25°C, with a maximum power dissipation of 143W (Tc). The low on-resistance (Rds On) of 4.9mOhm at 56A and 10V drive voltage, along with a gate charge (Qg) of 53nC at 4.5V, ensures efficient switching performance. It is packaged in a TO-252AA (DPAK) surface mount configuration, offering thermal advantages. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for power management and motor control systems within the automotive sector.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3617 pF @ 25 V |
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