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AUIRLS3114Z

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AUIRLS3114Z

MOSFET N-CH 40V 56A DPAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRLS3114Z is a N-Channel HEXFET® Power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 56A at 25°C, with a maximum power dissipation of 143W (Tc). The low on-resistance (Rds On) of 4.9mOhm at 56A and 10V drive voltage, along with a gate charge (Qg) of 53nC at 4.5V, ensures efficient switching performance. It is packaged in a TO-252AA (DPAK) surface mount configuration, offering thermal advantages. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for power management and motor control systems within the automotive sector.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Rds On (Max) @ Id, Vgs4.9mOhm @ 56A, 10V
FET Feature-
Power Dissipation (Max)143W (Tc)
Vgs(th) (Max) @ Id2.5V @ 100µA
Supplier Device PackageTO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3617 pF @ 25 V

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