AUIRLR3915TRL
MOSFET N-CH 55V 30A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRLR3915TRL is an N-Channel Power MOSFET from the HEXFET® series, designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous drain current (Id) of 30 A at 25°C (Tc). With a low on-resistance (Rds On) of 14 mOhm at 30 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 120 W (Tc) and a junction temperature range of -55°C to 175°C. The AUIRLR3915TRL is housed in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 92 nC at 10 V and input capacitance (Ciss) of 1870 pF at 25 V. This MOSFET is suitable for automotive, industrial motor control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
