AUIRLR3410
MOSFET N-CH 100V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRLR3410 is an N-Channel HEXFET® Power MOSFET designed for high-efficiency switching applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C, with a maximum power dissipation of 79W (Tc). The device exhibits a low on-resistance (Rds On) of 105mOhm at 10A and 10V, and a gate charge (Qg) of 34 nC at 5V. The AUIRLR3410 is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Its robust construction and performance characteristics make it ideal for automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±16V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
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