AUIRLL2705TR
MOSFET N-CH 55V 5.2A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRLL2705TR is an N-Channel Power MOSFET designed for automotive applications. This AEC-Q101 qualified component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 40mOhm maximum at 3.8A and 10V Vgs. With a gate charge (Qg) of 48 nC maximum at 10V Vgs and an input capacitance (Ciss) of 870 pF maximum at 25V Vds, it is suitable for various switching applications. The MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). Packaged in a PG-SOT223-4 (TO-261-4, TO-261AA) surface mount package, it is supplied on tape and reel. Drive voltages for optimal Rds On range from 4V to 10V, with a maximum gate-source voltage (Vgs) of ±16V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-SOT223-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
| Qualification | AEC-Q101 |
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