AUIRLL2705
MOSFET N-CH 55V 5.2A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRLL2705 is an N-Channel HEXFET® power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 5.2A at 25°C (Ta), with a maximum power dissipation of 1W (Ta). The device offers a low on-resistance (Rds On) of 40mOhm at 3.8A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 48 nC at 10V and an Input Capacitance (Ciss) of 870 pF at 25V. It operates within a temperature range of -55°C to 150°C (TJ) and is available in a surface mount SOT-223 package (TO-261-4, TO-261AA). This MOSFET is suitable for use in automotive and industrial applications requiring robust power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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