AUIRLL024N
MOSFET N-CH 55V 3.1A SOT-223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRLL024N is an N-Channel HEXFET® Power MOSFET designed for automotive and industrial applications. This component features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 3.1 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 65 mOhm at 3.1 A and 10 V Vgs. Key parameters include gate charge (Qg) of 15.6 nC (max) at 5 V and input capacitance (Ciss) of 510 pF (max) at 25 V. The AUIRLL024N is housed in a SOT-223 package (TO-261-4, TO-261AA) for surface mounting and has a maximum power dissipation of 1 W. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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