AUIRLL014N
MOSFET N-CH 55V 2A SOT-223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRLL014N is an N-channel HEXFET® power MOSFET designed for demanding applications. This surface-mount component, packaged in a SOT-223 (TO-261-4, TO-261AA), offers a drain-source voltage of 55V and a continuous drain current of 2A at 25°C. Key parameters include a maximum Rds(on) of 140mOhm at 2A and 10V, and a gate charge of 14nC at 10V. The input capacitance (Ciss) is 230pF at 25V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET features a maximum power dissipation of 1W (Ta). Its specifications make it suitable for automotive and industrial power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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