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AUIRL7736M2TR

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AUIRL7736M2TR

MOSFET N-CH 40V 179A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRL7736M2TR is an N-Channel Power MOSFET from the HEXFET® series, featuring a 40V drain-source voltage and a continuous drain current capability of 179A at 25°C (Tc). This DirectFET™ Isometric M4 packaged component offers a low on-resistance of 3mOhm maximum at 67A and 10V Vgs. Key electrical characteristics include a gate charge of 78 nC maximum at 4.5V and an input capacitance of 5055 pF maximum at 25V. The device operates over a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±16V. Power dissipation is rated at 63W (Tc) and 2.5W (Ta). This MOSFET is suitable for high-power applications in the automotive and industrial sectors.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric M4
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C179A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 67A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id2.5V @ 150µA
Supplier Device PackageDirectFET™ Isometric M4
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5055 pF @ 25 V

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