AUIRFZ46NL
MOSFET N-CH 55V 39A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRFZ46NL is a 55V N-Channel power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current capability of 39A at 25°C (Tc) and a low on-resistance of 16.5mOhm at 28A and 10V. The AUIRFZ46NL boasts a maximum power dissipation of 107W (Tc) and a typical gate charge of 72 nC at 10V, ensuring efficient switching performance. The device operates within an extended temperature range of -55°C to 175°C (TJ) and is supplied in a TO-262-3 long leads package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |
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