AUIRFZ44ZSTRL
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFZ44ZSTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 51A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 13.9mOhm at 31A and 10V Vgs. With a Gate Charge (Qg) of 43 nC at 10V and an Input Capacitance (Ciss) of 1420 pF at 25V, it is suitable for demanding power conversion circuits. The AUIRFZ44ZSTRL is housed in a TO-263-3, D2PAK surface mount package, offering a Power Dissipation (Pd) of 80W at 25°C (Tc). This MOSFET is commonly utilized in automotive, industrial, and telecommunications power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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