AUIRFZ44ZS
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFZ44ZS is a robust N-Channel Power MOSFET designed for demanding applications. This component features a 55 V drain-source breakdown voltage and a continuous drain current capability of 51 A at 25°C (Tc), with a maximum power dissipation of 80 W (Tc). The low on-resistance of 13.9 mOhm at 31 A and 10 V gate-source voltage, coupled with a gate charge of 43 nC at 10 V, ensures efficient switching performance.
The AUIRFZ44ZS utilizes Metal Oxide (MOSFET) technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package. Its operating temperature range is -55°C to 175°C (TJ). This device is well-suited for automotive, industrial, and power supply applications requiring high current handling and thermal efficiency. The maximum gate-source voltage is ±20 V, and the threshold voltage is 4 V at 250µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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