AUIRFZ24NS
MOSFET N-CH 55V 17A DPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFZ24NS is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 17A at 25°C (Tc). With a low on-resistance (Rds(on)) of 70mOhm maximum at 10A and 10V Vgs, it minimizes conduction losses. The AUIRFZ24NS offers a gate charge (Qg) of 20 nC maximum at 10V and an input capacitance (Ciss) of 370 pF maximum at 25V, facilitating fast switching speeds. Its robust design includes a maximum power dissipation of 45W at 25°C (Tc) and 3.8W at 25°C (Ta). Packaged in a TO-252AA (DPAK) surface-mount configuration, this component is suitable for automotive, industrial, and power management systems. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V maximum at 250µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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