AUIRFU540Z
MOSFET N-CH 100V 35A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFU540Z is a 100V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 28.5mOhm at 21A and 10V gate drive, with a continuous drain current capability of 35A (Tc) and a maximum power dissipation of 91W (Tc). The AUIRFU540Z exhibits a typical gate charge of 59 nC at 10V and an input capacitance (Ciss) of 1690 pF at 25V. Packaged in an IPAK (TO-251AA) through-hole configuration, it operates across a wide temperature range from -55°C to 175°C (TJ). This device is suitable for automotive, industrial, and general power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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