AUIRFU3607
MOSFET N CH 75V 56A I-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFU3607 is an N-Channel HEXFET® power MOSFET designed for demanding applications. This component features a 75V drain-source voltage and a continuous drain current capability of 56A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance of 9mOhm at 46A and 10V gate drive voltage, coupled with a gate charge of 84 nC at 10V, ensures efficient switching performance. With a maximum Vgs of ±20V and a threshold voltage of 4V at 100µA, precise control is achievable. The AUIRFU3607 is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
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