AUIRFSL8409
MOSFET N-CH 40V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRLFSL8409, features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 195A at 25°C. This device offers a low on-resistance (Rds On) of 1.2mOhm maximum at 100A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 375W (Tc), it is suitable for demanding applications. The AUIRLFSL8409 is housed in a TO-262-3 Short Leads, I2PAK package, allowing for efficient thermal management in surface mount configurations. Key electrical characteristics include a gate charge (Qg) of 450 nC maximum at 10V and input capacitance (Ciss) of 14240 pF maximum at 25V. Operating temperature range is -55°C to 175°C. This component is widely utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Short Leads, I2PAK |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14240 pF @ 25 V |
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