AUIRFSL8405
MOSFET N-CH 40V 120A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFSL8405 is a high-performance N-Channel Power MOSFET from the HEXFET® series. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). The device exhibits a low on-resistance of 2.3mOhm maximum at 100A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 163W (Tc), it is suitable for demanding applications. The AUIRFSL8405 is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA through-hole package. Applications include automotive systems, power management, and industrial motor control. Key electrical parameters include a gate charge of 161 nC at 10V and an input capacitance of 5193 pF at 25V. It operates reliably across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 163W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5193 pF @ 25 V |
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