AUIRFSL6535
MOSFET N-CH 300V 19A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFSL6535 is an N-Channel HEXFET® Power MOSFET designed for automotive applications. This component features a 300V drain-source breakdown voltage and a continuous drain current capability of 19A at 25°C case temperature. The device offers a maximum on-resistance of 185mOhm at 11A and 10V gate-source voltage. With a power dissipation of 210W (Tc), it is suitable for high-power switching circuits. Key characteristics include a gate charge of 57nC (max) at 10V and input capacitance of 2340pF (max) at 25V. The AUIRFSL6535 is qualified to AEC-Q101 standards and utilizes a PG-TO262-3-901 package with through-hole mounting. This device is commonly employed in automotive power management systems and electric vehicle powertrains.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | PG-TO262-3-901 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
| Qualification | AEC-Q101 |
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