AUIRFSL4310
MOSFET N-CH 100V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFSL4310 is an N-Channel HEXFET® power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 75 A at 25°C, with a maximum power dissipation of 300 W. The low on-resistance is specified at 7 mOhm at 75 A and 10 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 250 nC maximum at 10 V and input capacitance (Ciss) of 7670 pF maximum at 50 V. It operates within a temperature range of -55°C to 175°C. The AUIRFSL4310 is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package for through-hole mounting. This device is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V |
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