AUIRFSL4115
MOSFET N-CH 150V 99A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFSL4115 is a HEXFET® N-Channel Power MOSFET designed for high current applications. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current (Id) capability of 99A at 25°C, with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 12.1mOhm at 62A and 10V gate drive voltage, coupled with a gate charge (Qg) of 120nC, ensures efficient switching performance. It has an input capacitance (Ciss) of 5270pF at 50V and a threshold voltage (Vgs(th)) of 5V at 250µA. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262 package. This MOSFET is suitable for use in automotive and industrial power management applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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