AUIRFSL4010-313TRL
MOSFET N-CH 100V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRFSL4010-313TRL is an N-Channel power MOSFET designed for demanding automotive applications. This device features a 100V drain-source breakdown voltage (Vds) and a continuous drain current (Id) rating of 180A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds(on)) of 4.7mOhm is achieved at 106A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 215nC at 10V Vgs and input capacitance (Ciss) of 9575pF at 50V Vds. Operating within a temperature range of -55°C to 175°C (TJ), the AUIRFSL4010-313TRL is qualified to AEC-Q101 standards. It is supplied in a TO-262-3 package and delivered on tape and reel. This component is suitable for power management and switching applications in the automotive sector.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
| Qualification | AEC-Q101 |
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