AUIRFSL4010-306
MOSFET N-CH 100V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFSL4010-306 is an N-Channel HEXFET® power MOSFET qualified to AEC-Q101 standards. This component features a 100V drain-source voltage (Vds) and a continuous drain current (Id) of 180A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 4.7mOhm maximum at 106A and 10V (Vgs). With a maximum power dissipation of 375W (Tc) and a gate charge (Qg) of 215 nC maximum at 10V, it is suitable for demanding automotive applications. The AUIRFSL4010-306 is supplied in a TO-262 package and operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
| Qualification | AEC-Q101 |
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