AUIRFSL4010
MOSFET N CH 100V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies AUIRFSL4010, an N-Channel HEXFET® power MOSFET, offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc). This component features a low on-resistance (Rds On) of 4.7mOhm at 106A and 10V for efficient power handling. With a maximum power dissipation of 375W (Tc) and a gate charge (Qg) of 215 nC at 10V, it is suitable for demanding applications. The AUIRFSL4010 is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA form factor, allowing for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
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