AUIRFSA8409-7P
MOSFET N-CH 40V 523A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFSA8409-7P is an N-Channel power MOSFET designed for high-current automotive applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current capability of 523A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance of 0.69mOhm is achieved at 100A and a gate-source voltage (Vgs) of 10V. Key parameters include a gate charge (Qg) of 460 nC at 10V and input capacitance (Ciss) of 13975 pF at 25V. The MOSFET is qualified to AEC-Q101 standards and is housed in a PG-TO263-7 package, commonly known as D2PAK, facilitating surface mounting. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 523A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.69mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO263-7 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13975 pF @ 25 V |
| Qualification | AEC-Q101 |
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