AUIRFS8409TRL
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS8409TRL is an N-Channel Power MOSFET engineered for demanding applications. This HEXFET® series component features a 40V drain-source voltage rating and a continuous drain current capability of 195A at 25°C. With a low on-resistance of 1.2mOhm at 100A and 10V Vgs, it offers efficient power handling, dissipating up to 375W at the case temperature. The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key electrical parameters include a gate charge of 450 nC at 10V and input capacitance of 14240 pF at 25V. This MOSFET is commonly utilized in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 450 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14240 pF @ 25 V |
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