AUIRFS8409-7TRL
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS8409-7TRL is a HEXFET® N-Channel Power MOSFET designed for demanding applications. This surface mount device features a 40V drain-source voltage and a continuous drain current of 240A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance of 0.75mOhm at 100A and 10V gate drive voltage, coupled with a gate charge of 460nC at 10V, ensures efficient switching performance. The AUIRFS8409-7TRL utilizes advanced MOSFET technology and is housed in a D2PAK (7-Lead) package, suitable for high-power automotive and industrial power management systems. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13975 pF @ 25 V |
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