AUIRFS8408-7TRL
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® Series N-Channel MOSFET, part number AUIRFS8408-7TRL. This surface mount device features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 240A at 25°C. The device exhibits a low on-resistance (Rds On) of 1mOhm at 100A and 10V gate drive. Key parameters include a maximum gate charge (Qg) of 315 nC and input capacitance (Ciss) of 10250 pF at 25V. The power dissipation (Pd) is rated at 294W at 25°C. The package is a TO-263-7, D2PAK, supplied on tape and reel. This component is suitable for high-power automotive and industrial applications requiring efficient power switching. Operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO263-7-900 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10250 pF @ 25 V |
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