AUIRFS8408-7P
MOSFET N-CH 40V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFS8408-7P is an N-Channel MOSFET designed for high-power automotive applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 240A at 25°C (Tc), with a maximum power dissipation of 294W (Tc). The on-resistance (Rds On) is a low 1mOhm at 100A and 10V gate drive. Key parameters include a gate charge (Qg) of 315 nC at 10V and an input capacitance (Ciss) of 10250 pF at 25V. The device is housed in a PG-TO263-7-900 package, also known as TO-263-7, D2PAK, supporting surface mounting. It operates across an extended temperature range of -55°C to 175°C (TJ) and supports a maximum gate-to-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in electric vehicle powertrains, battery management systems, and other demanding automotive electronic systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 294W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO263-7-900 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10250 pF @ 25 V |
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