AUIRFS8407TRL
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS8407TRL is an N-Channel Power MOSFET from the HEXFET® series. This component features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 195A (Tc) at 25°C. The low on-resistance is specified as 1.8mOhm maximum at 100A and 10V gate drive. With a maximum power dissipation of 230W (Tc), this MOSFET is designed for demanding applications. It is housed in a TO-263-3, D2PAK surface mount package and supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 225 nC (max) at 10V and input capacitance (Ciss) of 7330 pF (max) at 25V. This device is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
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