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AUIRFS8407-7P

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AUIRFS8407-7P

MOSFET N-CH 40V 240A D2PAK-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFS8407-7P is an N-Channel HEXFET® power MOSFET designed for high-power automotive and industrial applications. This component features a 40V Drain-Source Voltage (Vds) and a continuous drain current capability of 240A at 25°C (Tc), with a maximum power dissipation of 231W (Tc). The low on-resistance of 1.3mOhm is achieved at 100A and 10V gate drive. Key parameters include a gate charge (Qg) of 225 nC (max) at 10V and input capacitance (Ciss) of 7437 pF (max) at 25V. The AUIRFS8407-7P is housed in a PG-TO263-7 (D2PAK-7) surface-mount package, offering excellent thermal performance. It operates across a wide temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage range of ±20V. This device is suitable for power management solutions in electric vehicles, industrial motor control, and power supplies.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)231W (Tc)
Vgs(th) (Max) @ Id3.9V @ 150µA
Supplier Device PackagePG-TO263-7
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7437 pF @ 25 V

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