AUIRFS8407
MOSFET N-CH 40V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS8407 is an N-Channel HEXFET® Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 195A at 25°C. The low on-resistance (Rds On) of 1.8mOhm is achieved at 100A and 10V gate-source voltage. The device offers a maximum power dissipation of 230W (Tc) and a gate charge (Qg) of 225 nC at 10V. With an input capacitance (Ciss) of 7330 pF, it is suited for high-current switching applications. The AUIRFS8407 is housed in a TO-263-3, D2PAK (2 Leads + Tab) package for surface mounting. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in automotive power management, industrial motor control, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
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