AUIRFS8403TRL
MOSFET N-CH 40V 123A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number AUIRFS8403TRL. This surface mount device features a 40 V drain-source voltage (Vdss) and a continuous drain current (Id) of 123 A at 25°C (Tc). With a low on-resistance of 3.3 mOhm maximum at 70 A and 10 V (Vgs), it offers efficient power handling. The device is specified with a 10 V gate drive voltage, a maximum gate charge (Qg) of 93 nC at 10 V, and input capacitance (Ciss) of 3183 pF at 25 V. Its power dissipation is rated at 99 W (Tc). Packaged in a TO-263-3, D2PAK configuration and supplied on tape and reel, this MOSFET is suitable for applications in automotive and industrial power systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 123A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3183 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
