AUIRFS6535TRL
MOSFET N-CH 300V 19A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS6535TRL is an N-Channel power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vdss) of 300 V and a continuous Drain Current (Id) of 19A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 185mOhm at 11A and 10V, with a typical Gate Charge (Qg) of 57 nC at 10V. The AUIRFS6535TRL is designed for surface mounting in a TO-263-3, D2PAK package, providing a maximum power dissipation of 210W (Tc). Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for high-efficiency power conversion applications across automotive and industrial sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
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