AUIRFS6535
MOSFET N-CH 300V 19A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFS6535 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 300V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 19A at 25°C. The low on-resistance (Rds On) of 185mOhm at 11A and 10V Vgs minimizes conduction losses. With a maximum power dissipation of 210W at 25°C (Tc), it is suitable for demanding thermal environments. The AUIRFS6535 utilizes a TO-263-3, D2PAK package for efficient surface mounting and is rated for an operating temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 57 nC at 10V and an input capacitance (Ciss) of 2340 pF at 25V. This device finds application in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
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