AUIRFS4610
MOSFET N-CH 100V 73A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® AUIRFS4610 is a 100V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current of 73A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). The low on-resistance of 14mOhm at 44A and 10V gate drive makes it suitable for high-efficiency power conversion. With a gate charge of 140 nC at 10V and input capacitance of 3550 pF at 50V, it offers robust switching characteristics. The AUIRFS4610 is housed in a TO-263-3, D2PAK surface mount package, enabling compact board designs. It operates across a wide temperature range of -55°C to 175°C (TJ), making it a reliable choice for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |
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