AUIRFS4410Z
MOSFET N-CH 100V 97A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the AUIRFS4410Z, an N-Channel Power MOSFET from the HEXFET® series. This component features a Drain-Source Voltage (Vds) of 100V and a continuous Drain Current (Id) capability of 97A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 9mOhm at 58A and 10V (Vgs), with a maximum power dissipation of 230W (Tc). Key parameters include a Gate Charge (Qg) of 120 nC at 10V and an input capacitance (Ciss) of 4820 pF at 50V (Vds). The AUIRFS4410Z is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding applications in automotive and industrial sectors. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
