AUIRFS4310Z
MOSFET N-CH 100V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number AUIRFS4310Z. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 120A (Tc) at 25°C. With a low on-resistance (Rds(on)) of 6mOhm at 75A and 10V Vgs, it offers efficient conduction. The AUIRFS4310Z is designed for high power applications with a maximum power dissipation of 250W (Tc). Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 6860 pF at 50V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package, it is suitable for automotive and industrial power switching applications. The maximum gate-source voltage is ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6860 pF @ 50 V |
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