AUIRFS4310TRL
MOSFET N-CH 100V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' AUIRFS4310TRL is a HEXFET® N-Channel Power MOSFET designed for high-performance applications. This surface mount component features a 100V drain-source breakdown voltage and supports a continuous drain current of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The AUIRFS4310TRL exhibits a low on-resistance of 7mOhm at 75A and 10V, facilitated by a 10V gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 250 nC at 10V and an input capacitance (Ciss) of 7670 pF at 50V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (TO-263AB) and supplied on tape and reel (TR), this MOSFET is suitable for demanding sectors such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V |
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