AUIRFS4310
MOSFET N-CH 100V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS4310 is a HEXFET® N-Channel Power MOSFET designed for high-current automotive applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The device exhibits a low on-resistance (Rds On) of 7mOhm at 75A and 10V, facilitated by a gate drive voltage of 10V. Key electrical characteristics include a gate charge (Qg) of 250 nC at 10V and an input capacitance (Ciss) of 7670 pF at 50V. The AUIRFS4310 is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Operating temperature ranges from -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. This MOSFET is commonly utilized in automotive power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V |
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