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AUIRFS4127TRL

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AUIRFS4127TRL

MOSFET N-CH 200V 72A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies AUIRFS4127TRL is an N-Channel Power MOSFET from the HEXFET® series. This automotive-grade component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) capability of 72A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 22mOhm maximum at 44A and 10V Vgs. Designed for high power applications, it has a maximum power dissipation of 375W (Tc). The AUIRFS4127TRL is housed in a PG-TO263-3 (D2PAK) surface mount package and is supplied on tape and reel. Key parameters include input capacitance (Ciss) of 5380pF maximum at 50V Vds and gate charge (Qg) of 150nC maximum at 10V Vgs. This component is qualified to AEC-Q101 standards and is suitable for demanding automotive applications.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C72A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 44A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePG-TO263-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5380 pF @ 50 V
QualificationAEC-Q101

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