AUIRFS4127
MOSFET N-CH 200V 72A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS4127 is a high-performance N-Channel Power MOSFET from the HEXFET® series. This automotive-grade component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 72A at 25°C (Tc). Designed for demanding applications, it offers a low on-resistance (Rds On) of 22mOhm maximum at 44A and 10V gate-source voltage (Vgs). The AUIRFS4127 boasts a maximum power dissipation of 375W (Tc) making it suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 150 nC at 10V and an input capacitance (Ciss) of 5380 pF at 50V. It is AEC-Q101 qualified and housed in a TO-263-3 D2PAK surface mount package. This device finds application in automotive power systems and other high-reliability electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 50 V |
| Qualification | AEC-Q101 |
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