AUIRFS4115TRL
MOSFET N-CH 150V 99A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies AUIRFS4115TRL is a HEXFET® N-Channel Power MOSFET designed for high-performance applications. This device features a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 99A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The low on-resistance (Rds On) of 12.1mOhm at 62A and 10V gate drive, coupled with a typical gate charge (Qg) of 120nC at 10V, ensures efficient switching. Input capacitance (Ciss) is 5270pF at 50V.
The AUIRFS4115TRL utilizes MOSFET technology and is housed in a surface mount D2PAK (TO-263-3, D2PAK) package, supplied on tape and reel. It operates across a wide temperature range of -55°C to 175°C (TJ) and supports a maximum gate-to-source voltage (Vgs) of ±20V. This component is suitable for demanding automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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