AUIRFS4115
MOSFET N-CH 150V 99A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number AUIRFS4115, offers 150V drain-source voltage and continuous drain current capability of 99A (Tc) at 25°C. This device features a low on-resistance of 12.1mOhm maximum at 62A and 10V gate drive. With a maximum power dissipation of 375W (Tc) and a gate charge (Qg) of 120 nC (max) at 10V, it is suitable for demanding applications. The input capacitance (Ciss) is 5270 pF (max) at 50V. The AUIRFS4115 utilizes advanced MOSFET technology and is housed in a surface-mount D2PAK (TO-263-3) package. Its robust construction and thermal performance make it ideal for use in automotive and industrial power systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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